something about AT29LV512

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   The AT29LV512 is a 3-volt-only in-system Flash programmable erasable read-onlymemory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Man-ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offersaccess times to 120 ns with power dissipation of just 54 mW over the commercial tem-perature range. When the device is deselected, the CMOS standby current is lessthan 40 µA. The device endurance is such that any sector can typically be written to inexcess of 10,000 times.
 AT29LV512 's Features:  • Single Supply Voltage, Range 3V to 3.6V
• 3-volt Only Read and Write Operation
• Software Protected Programming
• Low-power Dissipation– 15mAActiveCurrent– 40 µA CMOS Standby Current
• Fast Read Access Time – 120 ns
• Sector Program Operation– Single-cycle Reprogram (Erase and Program)– 512 Sectors (128 Bytes/Sector)– Internal Address and Data Latches for 128 Bytes
• Fast Sector Program Cycle Time – 20 ms Max.
• Internal Program Control and Timer
• DATA Polling for End of Program Detection
• Typical Endurance > 10,000 Cycles
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges

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yeluoluo Members Profile Send Private Message Find Members Posts Add to Buddy List Newbie Joined: 04 May 2011 Status: Offline Points: 14	Post Options Post Reply Quote yeluoluo Thanks(0) Quote Reply Topic: something about AT29LV512 Posted: 04 May 2011 at 10:33
	The AT29LV512 is a 3-volt-only in-system Flash programmable erasable read-onlymemory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Man-ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offersaccess times to 120 ns with power dissipation of just 54 mW over the commercial tem-perature range. When the device is deselected, the CMOS standby current is lessthan 40 µA. The device endurance is such that any sector can typically be written to inexcess of 10,000 times. AT29LV512 's Features: • Single Supply Voltage, Range 3V to 3.6V • 3-volt Only Read and Write Operation • Software Protected Programming • Low-power Dissipation– 15mAActiveCurrent– 40 µA CMOS Standby Current • Fast Read Access Time – 120 ns • Sector Program Operation– Single-cycle Reprogram (Erase and Program)– 512 Sectors (128 Bytes/Sector)– Internal Address and Data Latches for 128 Bytes • Fast Sector Program Cycle Time – 20 ms Max. • Internal Program Control and Timer • DATA Polling for End of Program Detection • Typical Endurance > 10,000 Cycles • CMOS and TTL Compatible Inputs and Outputs • Commercial and Industrial Temperature Ranges